mmdt5551 dual npn small signal surface mount transistor features ? epitaxial planar die construction ? complementary pnp type available (mmdt5401) ? ideal for medium power amplification and switching ? ultra-small surface mount package ? lead free/rohs compliant (note 3) ? "green" device (note 4 and 5) mechanical data ? case: sot-363 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: solderable per mil-std-202, method 208 ? lead free plating (matte tin finish annealed over alloy 42 leadframe). ? terminal connections: see diagram ? marking information: k4n, see page 3 ? ordering & date code information: see page 3 ? weight: 0.006 grams (approximate) sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimens mm ions in a m j l d b c h k g f c 1 b 2 e 2 e 1 b 1 c 2 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 200 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0. 062 inch; pad layout as shown on diodes inc. suggested pad layou t document ap02001, which can be found on our website at http://www.diodes.com/ datasheets/ap02001.pdf. 2. maximum combined dissipation. 3. no purposefully added lead. 4. diodes inc.'s "green" policy can be found on our w ebsite at http://www.diodes.com /products/lead_free/index.php. 5. product manufactured with date code uo (week 40, 2007) an d newer are built with green molding compound. product manufactur ed prior to date code uo are built with non-green molding com pound and may contain halogens or sb2o3 fire retardants. ds30172 rev. 8 - 2 1 of 4 www.diodes.com mmdt5551 ? diodes incorporated
electrical characteristics @t a = 25c unless otherwise specified ds30172 rev. 8 - 2 2 of 4 www.diodes.com mmdt5551 ? diodes incorporated characteristic symbol min max unit test condition off characteristics (note 6) collector-base breakdown voltage v (br)cbo 180 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 160 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 ? v i e = 10 a, i c = 0 collector cutoff current i cbo ? 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo ? 50 na v eb = 4.0v, i c = 0 on characteristics (note 6) dc current gain h fe 80 80 30 ? 250 ? ? i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v collector-emitter saturation voltage v ce(sat) ? 0.15 0.20 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? 1.0 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 small signal current gain h fe 50 250 ? v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz noise figure nf ? 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k , f = 1.0khz notes: 6. short duration pulse test used to minimize self-heating effect. 0.04 0.05 0.06 0.07 0.08 0.09 0.15 0.14 0.13 0.12 0.11 0.10 1 10 100 1,000 v, c o lle c t o r t o emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) fig. 2, collector emitter saturation voltage vs. collector current c i i c b = 10 t = 150c a t = 25c a t = -50c a 0 50 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs. ambient temperature a 100 150 200 0
1 10 1,000 100 1 10 100 h, 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 11 0 100 v , base emi t t e r v o l t a g e (v) be(on) i , collector current (ma) fig. 4, base emitter voltage vs. collector current c ds30172 rev. 8 - 2 3 of 4 www.diodes.com mmdt5551 ? diodes incorporated d c c u r r e n t g ai n fe i , collector current (ma) fig. 3, dc current gain vs. collector current c 1 10 1,000 100 11 0 f, 1 0 0 g ain bandwid t h p r o d u c t (m h z) t i , collector current (ma) fig. 5, gain bandwidth product vs. collector current c ordering information (note 7) device packaging shipping mmdt5551-7-f sot-363 3000/tape & reel notes: 7. for packaging details, go to our websit e at http://www.diodes.c om/datasheets/ap02007.pdf. marking information k4n k4n ym ym k4n = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code j k l m n p r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d
ds30172 rev. 8 - 2 4 of 4 www.diodes.com mmdt5551 ? diodes incorporated important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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